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| NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. Features http://onsemi.com * * * * * Pb-Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs 16 A COMPLEMENTARY POWER TRANSISTORS 140 V, 150 W MARKING DIAGRAM MAXIMUM RATINGS (Note 1) Rating Collector - Emitter Voltage Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous - Peak (Note 2) Base Current - Continuous - Peak (Note 2) Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD TJ, Tstg Symbol VCEO VCEX VCBO VEBO IC 16 30 IB 4 15 150 0.855 -65 to +200 W W/C C Adc Value 140 160 160 7 Unit Vdc Vdc Vdc Vdc Adc xxxx A YY WW TO-204 CASE 1-07 2Nxxxx MEX AYYWW = 3773 or 6609 = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Symbol RqJC Max 1.17 Unit C/W **For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2004 1 July, 2004 - Rev. 10 Publication Order Number: 2N3773/D III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII II I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII I III I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%. 4. Indicates JEDEC Registered Data. SECOND BREAKDOWN CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 3) OFF CHARACTERISTICS (Note 3) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ORDERING INFORMATION 2N6609 2N3773G 2N3773 Second Breakdown Collector Current with Base Forward Biased t = 1 s (non-repetitive), VCE = 100 V, See Figure 12 Small-Signal Current Gain (Note 4) (IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz) Magnitude of Common-Emitter Small-Signal, Short-Circuit, Forward Current Transfer Ratio (IC = 1 A, f = 50 kHz) Base-Emitter On Voltage (Note 4) (IC = 8 Adc, VCE = 4 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 800 mAdc) (Note 4) (IC = 16 Adc, IB = 3.2 Adc) DC Current Gain (IC = 8 Adc, VCE = 4 Vdc) (Note 4) (IC = 16 Adc, VCE = 4 Vdc) Emitter Cutoff Current (Note 4) (VBE = 7 Vdc, IC = 0) Collector Cutoff Current (VCB = 140 Vdc, IE = 0) Collector Cutoff Current (Note 4) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (Note 4) (VCE = 120 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) Collector-Emitter Sustaining Voltage (Note 4) (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) Collector-Emitter Breakdown Voltage (Note 4) (IC = 0.2 Adc, IB = 0) Device Characteristic NPN 2N3773*, PNP 2N6609 http://onsemi.com TO-204 (Pb-Free) Package TO-204 TO-204 VCEO(sus) VCER(sus) VCEX(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO ICEX |hfe| hFE IS/b hfe 100 Unit / Tray 100 Unit / Tray 100 Unit / Tray Shipping Min 150 160 140 1.5 40 15 5 -- 4 - - - - - - - Max 2.2 1.4 4 2 10 60 - 10 - - - 5 2 - - - mAdc mAdc mAdc mAdc Unit Adc Vdc Vdc Vdc Vdc Vdc - - - 2 NPN 2N3773*, PNP 2N6609 NPN 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 0.3 VCE = 4 V 25C 150C 300 200 25C hFE , DC CURRENT GAIN -55 C 100 70 50 30 20 10 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 20 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 20 VCE = 4 V -55 C PNP 150C Figure 1. DC Current Gain Figure 2. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1.6 IC = 4 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 1.6 1.2 IC = 8 A 0.8 IC = 4 A IC = 16 A 1.2 IC = 8 A IC = 16 A 0.8 0.4 TC = 25C 0 0.05 0.07 0.1 0.4 TC = 25C 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 2.0 3.0 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 2.0 3.0 5.0 Figure 3. Collector Saturation Region Figure 4. Collector Saturation Region 2.0 IC/IB = 10 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 IC/IB = 10 1.6 1.2 VBE(sat) 25C 150C 150C VCE(sat) 2.0 3.0 25C 1.2 VBE(sat) 25C 150C 150C 25C VCE(sat) 0.8 0.8 0.4 0 0.2 0.3 0.4 0.5 0.7 1.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. "On" Voltage Figure 6. "On" Voltage http://onsemi.com 3 NPN 2N3773*, PNP 2N6609 30 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C, SINGLE PULSE SECOND BREAKDOWN LIMIT 500 ms dc 10 ms 40 ms 100 ms 200 ms 1.0 ms 100 ms 0.05 0.03 3.0 200 300 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 POWER DERATING FACTOR (%) 80 60 THERMAL DERATING 40 20 0 0 40 80 120 TC, CASE TEMPERATURE (C) 160 200 Figure 8. Power Derating http://onsemi.com 4 NPN 2N3773*, PNP 2N6609 PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 A N C -T- E D U V 2 2 PL SEATING PLANE K M 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 NPN 2N3773*, PNP 2N6609 PowerBase is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 2N3773/D |
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